Simulation of storage time versus reverse bias current for p+n and pin diodes

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Turkish Journal of Electrical Engineering and Computer Science
Volume:19 Issue:1
Simulation of storage time versus reverse bias current for p+n and pin diodes

Simulation of storage time versus reverse bias current for p+n and pin diodes

Authors : Mehmet Serhat KESERLİOĞLU, Hasan Hüseyin ERKAYA

Pages : 87-96

View : 15 | Download : 10

Publication Date : 0000-00-00

Article Type : Research Paper

Abstract :In this study, the reverse-recovery behaviors of pin and p+n diodes were simulated as a function of the reverse current and carrier lifetime. For this purpose, a 1-D simulation program was written to solve the semiconductor equations. MatLab partial differential equation solver was used. The reverse recovery response of pin and p+n diodes was obtained for various values of a resistor in series and of carrier lifetime. The transient response for voltage and current was determined.
Keywords : Reverse recovery, pin diode, semiconductor devices, semiconductor devices simulation

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