An approach based on particle swarm computation to study the nanoscale DG MOSFET-based circuits

Authors : Faycal DJEFFAL, Toufik BENDIB, Redha BENZID, Abdelhamid BENHAYA

Pages : 1131-1141

View : 15 | Download : 16

Publication Date : 0000-00-00

Article Type : Research Paper

Abstract :The analytical modeling of nanoscale Double-Gate MOSFETs insert ignore into journalissuearticles values(DG); requires generally several necessary simplifying assumptions to lead to compact expressions of current-voltage characteristics for nanoscale CMOS circuits design. Further, progress in the development, design and optimization of nanoscale devices necessarily require new theory and modeling tools in order to improve the accuracy and the computational time of circuits` simulators. In this paper, we propose a new particle swarm strategy to study the nanoscale CMOS circuits. The latter is based on the 2-D numerical Non-Equilibrium Green`s Function insert ignore into journalissuearticles values(NEGF); simulation and a new extended long channel DG MOSFET compact model. Good agreement between our results and numerical simulations has been found. The developed model can also be incorporated into the nano-CMOS circuits` simulators to study CMOS-based devices without impact on the computational time and data storage.
Keywords : Particle Swarm, DG MOSFET, Optimization, nanoscale, compact model