The Effect of Collector Doping on InP-Based Double Heterojunction Bipolar Transistors

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Turkish Journal of Electrical Engineering and Computer Science
Volume:14 Issue:3
The Effect of Collector Doping on InP-Based Double Heterojunction Bipolar Transistors

The Effect of Collector Doping on InP-Based Double Heterojunction Bipolar Transistors

Authors : Serkan TOPALOĞLU, Jörn DRIESEN, Werner PROST

Pages : 429-436

View : 19 | Download : 8

Publication Date : 0000-00-00

Article Type : Research Paper

Abstract :High current effects on double heterojunction bipolar transistor insert ignore into journalissuearticles values(DHBT); performance were investigated. Three DHBTs with different collector doping densities were grown and processed. DC and RF measurements were performed to evaluate the influence of collector doping and the related Kirk effect on HBT performance. In addition to these samples, the Kirk effect was proven on SHBTs and the delay of this effect on submicron HBTs was investigated.
Keywords : Turk J Elec Eng Comp Sci, 14, 2006, 429 436 Turk J Elec Eng Comp Sci, vol 14, iss 3

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