Class-E GaAs HBT power amplifier with passive linearization scheme for mobile wireless communications

Authors : Uthirajoo ESWARAN, Harikrishnan RAMIAH, Jeevan KANESAN, Ahmed Wasif REZA

Pages : 1210-1218

Doi:10.3906/elk-1212-43

View : 17 | Download : 16

Publication Date : 0000-00-00

Article Type : Research Paper

Abstract :A linearization technique for improving the class-E power amplifier insert ignore into journalissuearticles values(PA);`s adjacent channel power ratio insert ignore into journalissuearticles values(ACPR); is proposed. The design is simulated in a 2-mu m InGaP/GaAs heterojunction bipolar transistor process. The integration of a passive predistorter at the input of the PA linearizes the proposed architecture. At a 29-dBm output power, the PA`s ACPR is indicated to be -51 dBc, meeting the stringent code division multiple access regulation. At this exact output power, the simulated power added efficiency is 55 % with the collector voltage headroom consumption of 3.4 V. The input return loss, S11, of the PA is simulated as -12.5 dB. With an active finger print dimension of 1000 mu m \times 750 mu m, the proposed PA is well suited for the application of mobile wireless communication.
Keywords : Class E, HBT, linearization, power amplifier