Single event multiple upset-tolerant SRAM cell designs for nano-scale CMOS technology

Authors : RAMIN RAJAEI, BAHAR ASGARI, MAHMOUD TABANDEH, MAHDI FAZELI

Pages : 1035-1047

View : 16 | Download : 9

Publication Date : 0000-00-00

Article Type : Research Paper

Abstract :In this article, two soft error tolerant SRAM cells, the so-called RATF1 and RATF2, are proposed and evaluated. The proposed radiation hardened SRAM cells are capable of fully tolerating single event upsets insert ignore into journalissuearticles values(SEUs);. Moreover, they show a high degree of robustness against single event multiple upsets insert ignore into journalissuearticles values(SEMUs);. Over the previous SRAM cells, RATF1 and RATF2 offer lower area and power overhead. The Hspice simulation results through comparison with some prominent and state-of-the-art soft error tolerant SRAM cells show that our proposed robust SRAM cells have smaller area overhead insert ignore into journalissuearticles values(RAFT1 offers 58% smaller area than DICE);, lower power delay product insert ignore into journalissuearticles values(RATF1 offers 231.33% and RATF2 offers 74.75% lower PDP compared with DICE);, much more soft error robustness, and larger noise margins.
Keywords : Single event upset SEU, single event multiple upset SEMU, soft error, SRAM cell