XRD, XPS, and optical characterizations of Al-doped ZnO film grown on GaAs substrate

Authors : Ebru ŞENADIM TÜZEMEN, Hülya ŞAHİN, Kamuran KARA, Sezai ELAGÖZ, Ramazan ESEN

Pages : 111-117

Doi:10.3906/fiz-1301-17

View : 19 | Download : 6

Publication Date : 0000-00-00

Article Type : Research Paper

Abstract :A ZnO:Al insert ignore into journalissuearticles values(10%); thin film was prepared on GaAsinsert ignore into journalissuearticles values(100); substrate by using a pulsed filtered cathodic vacuum arc deposition insert ignore into journalissuearticles values(PFCVAD); system. The ZnO:Al thin film was thermally annealed for 1 h at 2 different temperatures in air. The film structure was investigated as a function of annealing temperature by X-ray diffraction insert ignore into journalissuearticles values(XRD);. ZnO:Al film annealed at 500 °C by PFCVAD method resulted in an amorphous film. However, after annealing ZnO:Al film at 600 °C, it showed insert ignore into journalissuearticles values(100); and insert ignore into journalissuearticles values(002); peaks at around 32° and 34°, respectively. The chemical state of ZnO:Al insert ignore into journalissuearticles values(AZO); film on GaAs substrate was investigated by using X-ray photoelectron spectroscopy insert ignore into journalissuearticles values(XPS);. The dependence of optical properties on annealing was investigated by using a UV-VIS-NIR spectrophotometer. We also obtained the energy gap of ZnO:Al thin film by diffused reflectance spectra using the Kubelka--Munk function.
Keywords : Al doped zinc oxide, annealing temperature, diffuse and specular reflectance, optical band gap