Determination of barrier height temperature coefficient by Norde`s method in ideal Co/n-GaAs Schottky contacts

Authors : Abdulmecit TURUT

Pages : 235-244

Doi:10.3906/muh-1212-5

View : 28 | Download : 7

Publication Date : 0000-00-00

Article Type : Research Paper

Abstract :We have formed the ideal Co/n-GaAs Schottky barrier diodes insert ignore into journalissuearticles values(SBDs); by magnetron DC sputtering. The experimental current-voltage data of the Co/n-GaAs SBD are almost independent of the sample temperature and quite well obey the thermionic emission model from 100 K to 320 K. We have showed that the temperature coefficient of the barrier height can be determined using Norde`s method instead of the temperature-dependent capacitance-voltage measurements or the flat-band barrier height values because the thermionic emission current dominates in the ideal SBDs. We have obtained a barrier height temperature coefficient value of a = 0.41 meV/K for Co/n-GaAs SBDs used in this work, which is in close agreement with values reported for the metal/n-GaAs Schottky diodes in the literature.
Keywords : Schottky barrier diode, Norde`s method, GaAs, temperature coefficient of the barrier height