The low temperature resistivity of thermally evaporated antiferromagnetic Mn100-X Rux thin films

Authors : Francis Kofi AMPONG and Francis BOAKYE

Pages : 23-29

Doi:10.3906/kim-1204-74

View : 15 | Download : 5

Publication Date : 0000-00-00

Article Type : Research Paper

Abstract :Electrical resistivity measurements on thermally evaporated Mn100-x Rux thin films insert ignore into journalissuearticles values(with x = 0.05 at.% Ru and x = 2.5 at.% Ru); have been carried out over the temperature range from 300 to 1.4 K. A behaviour typical of the bulk a-Mn has been observed on the film with x = 0.05 at.% Ru. The Néel point of this specimen is established at 90 \pm 1 K which is typical of the bulk. This Néel point is raised to 100 \pm 1 K with x = 2.5 at.% Ru in a-Mn. A relatively long range magnetic ordering was observed with x = 0.05 at.% Ru in a-Mn indicating that the concentration of Ru has an adverse effect on antiferromagnetism in a-Mn. The low temperature resistivity of the 2.50 at.% Ru in a-Mn can be explained in terms of Kondo scattering.
Keywords : Resistivity, spin disorder scattering, kondo scattering