Photocurrent and surface recombination mechanisms in the InxGa1-xN\slashGaN different-sized quantum dot solar cells

Authors : Hossein MOVLA, Foozieh SOHRABI, Jafar FATHI, Hassan BABAEI

Pages : 97-106

Doi:10.3906/kim-1204-50

View : 19 | Download : 8

Publication Date : 0000-00-00

Article Type : Research Paper

Abstract :We present a p-i-n structured solar cell with stacked layers of InxGa1-xN Quantum Dots insert ignore into journalissuearticles values(QDs); with different indium composition. The photocurrent and surface recombination processes are investigated in the i-region. We have shown that the QDs in the i-region can play the role of both generation or recombination centers. The photocurrent has been calculated by self-consistent method to solve continuity equation of charge carriers in the layers of the i-region. By changing the Indium composition in InxGa1-xN QDs, the band gap of QDs varies and therefore provides a considerable overlapping with solar spectrum. Proposed SC with different-sized QDs and different Indium composition leads to absorption of a desirable wavelength range of solar spectrum and therefore a ``rainbow`` solar cell can be designed.
Keywords : p i n Solar Cells, InxGa1 xN Quantum dots, photocurrent, surface recombination rate