Transport property measurements of Bi2Se3 crystal grown by Bridgman method

Authors : M P DESHPANDE, Nilesh N PANDYA, And M N PARMAR

Pages : 139-148

Doi:10.3906/vet-1209-9

View : 15 | Download : 9

Publication Date : 0000-00-00

Article Type : Research Paper

Abstract :This paper deals with the growth of Bi2Se3 crystal by newly designed experimental set-up of Bridgman technique in our laboratory. Grown crystal is characterized by EDAX insert ignore into journalissuearticles values(Energy Dispersive Analysis of X-rays);, XRD insert ignore into journalissuearticles values(X-ray Diffraction);, low temperature thermopower measurements insert ignore into journalissuearticles values(17-284 K);, resistivity measurements insert ignore into journalissuearticles values(16-294 K); and Hall Effect at room temperature in order to study its various properties. The surface study of the grown crystal using AFM insert ignore into journalissuearticles values(Atomic Force Microscopy); shows a hexagonal unit cell shape whose internal angle determined comes out to be nearly equal to 122.94° which has close resemblance with an angle of 120° of perfect internal angle of hexagon. Various parameters obtained from above measurements like lattice parameters, crystallite size and stacking fault probabilities are discussed in detail in the paper.
Keywords : Crystal growth, transport properties, thermoelectric materials, atomic force microscopy