Effective Annealing of ZnO Thin Films Grown by Electrochemical Deposition Technique

Authors : Cevdet COŞKUN, Harun GÜNEY, Emre Gür And Sebahattin TÜZEMEN

Pages : 49-56

Doi:10.3906/tar-1210-21

View : 18 | Download : 9

Publication Date : 0000-00-00

Article Type : Research Paper

Abstract :Wide and direct band gap ZnO thin films have been grown on conductive indium-tin-oxide insert ignore into journalissuearticles values(ITO); substrates by electrochemical deposition insert ignore into journalissuearticles values(ECD); technique using different growth parameters. High quality films in terms of crystallographic and optical characteristics have been obtained under a cathodic potential of -0.9 V; a pH of 5.2, using 0.1 M Zninsert ignore into journalissuearticles values(NO3);2 solution. Oxygen gas flow through the solution increased the growth rate and the quality of samples. Subsequent heat treatments at various temperatures for 30 minutes under dry N2 gas flow show that the most suitable annealing temperature is 300 °C for these electrochemically deposited thin films on ITO. X-ray diffraction insert ignore into journalissuearticles values(XRD); measurements show that the samples have preferably grown along the direction of insert ignore into journalissuearticles values(101); and that the annealing at 300 °C caused an increase in the peak intensity belonging the insert ignore into journalissuearticles values(101); surfaces. The Atomic Force Microscopy insert ignore into journalissuearticles values(AFM); measurements revealed that the annealing process improved the surface quality of the samples. It has also been observed from the absorption measurements that the band-gap is enhanced from 3.23 to 3.37 eV after this certain heat treatment.
Keywords : ZnO, electrochemical deposition, annealing effect