High Field Conduction in Thin Films of a-(Ge.20{Se0}.80)1-x{Pb}x Glassy Alloys

Authors : Rachna Singh And Santosh KUMAR

Pages : 291-297

Doi:10.3906/sag-1210-28

View : 17 | Download : 9

Publication Date : 0000-00-00

Article Type : Research Paper

Abstract :The present paper reports d.c. conductivity measurements at high electric fields in vacuum evaporated amorphous thin films of insert ignore into journalissuearticles values(Ge.20Se0.80);1-xPbx insert ignore into journalissuearticles values(where x = 0, 0.02, 0.04, 0.06 and 0.10); glassy alloys. Current-Voltage insert ignore into journalissuearticles values(I-V); Characteristics have been measured at various fixed temperatures. In these samples, at low electric fields, ohmic behavior is observed. However, at high electric fields insert ignore into journalissuearticles values(E \sim 104 V/cm);, non-ohmic behavior is observed. An analysis of the experimental data confirms the presence of space charge limited conduction insert ignore into journalissuearticles values(SCLC); in the glassy materials studied in the present case. From the fitting of the data to the theory of SCLC, the density of defect states insert ignore into journalissuearticles values(DOS); near Fermi level is calculated. It is found that the DOS is increasing with increase in concentration of Pb in pure binary Ge0.20Se0.80 glassy system. The peculiar role of third element Pb as an impurity in the pure binary Ge0.20Se0.80 glassy alloy is also discussed.
Keywords : Thin films, Chalcogenide glasses, SCLC, DOS