Theoretical Study of Electronic Properties of the Semi-Conductors AlN and GaN With the Empirical Pseudopotential Method EPM

Authors : Kaddour BENCHERIF, Mohamed SEHIL, Hamza ABID

Pages : 193-197

Doi:10.3906/sag-1210-7

View : 27 | Download : 10

Publication Date : 0000-00-00

Article Type : Research Paper

Abstract :The electronic structure of binary compounds AlN and GaN are presented. We have used the empirical pseudo-potential method. Good agreement between the calculated results and experiment is obtained. The charge densities are presented for the sum of the four valence bands of both AlN and GaN.
Keywords : Empirical Pseudo potential Method EPM, nitride aluminium, nitride gallium compounds, III N semi conductors, wide band gap semi conductors, energy gap, charge density