Optical and Structural Properties of the GaSxSe1−x, GaSe, TlGaSe2 and TlInS2 Semiconductors

Authors : Aydın Ulubey KULIBEKOV

Pages : 227-234

Doi:10.3906/sag-1206-94

View : 18 | Download : 9

Publication Date : 0000-00-00

Article Type : Research Paper

Abstract :In the present work, crystal structure and optical properties of the layered chalcogenides GaSxSe1-x, GaSe, TlGaSe2 and TlInS2 were investigated in the visible insert ignore into journalissuearticles values(VIS); and infrared insert ignore into journalissuearticles values(IR); range of spectra. Partial content of the elements were performed and the space group were determined by help of X-ray diffraction experiments. Making use of the experimental results, we have constructed a scheme of band motion for the transition from GaSe to GaS. It has been established that that the infrared active optical modes show typical two-mode behaviour. DOI: 10.1007/s10762-005-0294-3, 10.1063/1.2128694
Keywords : Chalcogenides, layered semiconductors, optical properties, vibrational modes, multiphonon absorption, crystalline and band structure, correlation analysis