Photo Organic Field Effect Transistor´s Properties

Authors : Khasan S KARIMOV, İbrahim QAZI, M Mahroof TAHIR

Pages : 13-19

Doi:10.3906/tar-1206-14

View : 25 | Download : 9

Publication Date : 0000-00-00

Article Type : Research Paper

Abstract :A thin organic films of p-type semiconducting copper phthalocynanine insert ignore into journalissuearticles values(CuPc); film and semitransparent Al film were deposited in sequence by vacuum evaporation on glass substrate with Ag source and drain electrodes, fabricating an organic field effect transistor with metal insert ignore into journalissuearticles values(aluminum);-semiconductor insert ignore into journalissuearticles values(copper phthalocyanine); Schottky junction. The transistor was investigated for effect of illumination on its characteristics. It was found that the gate-source insert ignore into journalissuearticles values(Al-Ag); and gate-drain insert ignore into journalissuearticles values(also Al-Ag); dark current-voltage characteristics show rectification behavior. Under non-modulated filament-lamp illumination, photo-potential is developed between gate-source and gate-drain terminals. Drain current of this organic phototransistor insert ignore into journalissuearticles values(OPT); increased with illumination. An energy band diagram of the Al-CuPc junction and the equivalent circuit diagram of the OPT were produced.
Keywords : Organic Field Effect Transistor, Copper Phthalocyanine, Metal Semiconductor Schottky Junction, Phototransistor