Electronic Structure of Surfaces in GeSe Layered Semiconductor

Authors : Z A JAHANGIRLI, M Z ZARBALIYEV

Pages : 77-84

Doi:10.3906/sag-1301-54

View : 18 | Download : 8

Publication Date : 0000-00-00

Article Type : Research Paper

Abstract :Green´s function method in bases sets of Linear Combinations of Atomic Orbitals insert ignore into journalissuearticles values(LCAO); is used to calculate the electronic structure of the insert ignore into journalissuearticles values(010); surface of GeSe semiconductor. The energy states in energy gaps, their origin, orbital content, resonances and local changes in the density of states due to the surface are discussed.
Keywords : Green´s function methods, Defects, Single crystal surfaces, Surface defects