Some Physical Properties of g Irradiated Gex(As2Te3)100 - x Chalcogenide System

Authors : Afaf ABDELAAL, Bahiga AbdelHameed MANSOUR, Hoda Mohamed EISSA

Pages : 223-232

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Publication Date : 0000-00-00

Article Type : Research Paper

Abstract :The effect of g -radiation on the electrical conductivity, switching, and optical properties of the chalcogenide amorphous system Gexinsert ignore into journalissuearticles values(As2Te3);100 - x insert ignore into journalissuearticles values(where x = 0,1,5,10 atm %); have been studied. The results show that the radiation causes a shift of the optical gap,as well as a change in the electrical activation energy and the threshold voltage. As the g -doses increase, the values of the allowed indirect optical energy gap Eopt for the different compositions decreases and the tail energy width increases.
Keywords : Chalcogenide glasses, gamma ray effects, visible spectra, radiative electrical optical properties, gamma irradiation, transmission edge shift, defect formation