Photoconductivity of Selenium and Sulphur Doped a-Si:H thin Films

Authors : Sanjeev Kumar SHARMA, Himanshu GUPTA

Pages : 243-248

Doi:10.3906/sag-1206-40

View : 15 | Download : 8

Publication Date : 0000-00-00

Article Type : Research Paper

Abstract :This paper presents a study of photoconductivity of S- and Se-doped a-Si:H as a function of composition and temperature. Temperature dependence of photoconductivity of the films was measured under the illumination of white light at 100~mW/cm2. The room temperature photoconductivity for the same doping concentration of 10-4 insert ignore into journalissuearticles values(to develop H2Se/SiH4 and H2S/SiH4); is found to be higher in Se-doped -- than S-doped -- a-Si:H film due to a low defect density. From the measurement of intensity dependence of photoconductivity, it is found that the addition of Se and S changes the recombination mechanism from monomolecular, for low-doped films, to bimolecular at higher levels of doping of Se and S.
Keywords : Se, S, a Si H, Photoconductivity, recombination mechanism