Determination of Defect Distribution in a Ga-rich ZnO/CdS/Cu(In,Ga)Se2 Solar Cell by Admittance Spectroscopy

Authors : Habibe BAYHAN

Pages : 17-24

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Publication Date : 0000-00-00

Article Type : Research Paper

Abstract :This article presents a study on the energy distribution of defects in efficient thin film ZnO/CdS/Cuinsert ignore into journalissuearticles values(In,Ga);Se2 heterojunction solar cell by the use of admittance spectroscopy. The capacitance spectra of the device has been analyzed using a model based on the existence of a homogeneous distribution of bulk acceptors in the absorber Cuinsert ignore into journalissuearticles values(In,Ga);Se2 layer. This model reveals an emission from a distribution of hole traps centered at an activation energy of about 300 meV with a defect density of 1.2 \times 1017 eV-1 cm-3. The band gap of the absorber layer is estimated to be about 1.46 eV which corresponds to a Ga content of about x \approx 0.7 with x the ratio Ga/insert ignore into journalissuearticles values(Ga+In);.
Keywords : CIGS, solar cell, admittance spectroscopy, defect distribution