Electrical Characteristics of Si Doped with Sb by Laser Annealing

Authors : Raid A ISMAIL, Aseel A HADI

Pages : 145-152

View : 21 | Download : 7

Publication Date : 0000-00-00

Article Type : Research Paper

Abstract :Laser induced diffusion of antimony in silicon was obtained using a Nd:YAG pulsed laser. The irradiation of antimony-coated silicon by laser beam allowed melting and diffusion of antimony inside the silicon. Diodes were fabricated. Laser beam energy and substrate temperature played a major role in electrical sheet conductivity I-V, and C-V characteristics of the fabricated diodes. High laser energy reduced the electrical sheet conductivity and dominated the recombination current due to the generation-recombination process and trapping centers. On the other hand, the diffusion current dominated for diodes fabricated under heating conditions of the sample during laser irradiation. The C-V measurements of fabricated diodes revealed that the junction were of abrupt type.
Keywords : Laser annealing, LID doping, Silicon devices, Sb dopants