The Temperature Dependence of the Electronic Structure of Si d-doped GaAs

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Turkish Journal of Physics
Volume:26 Issue:6
The Temperature Dependence of the Electronic Structure of Si d-doped GaAs

The Temperature Dependence of the Electronic Structure of Si d-doped GaAs

Authors : Emine ÖZTÜRK

Pages : 465-472

View : 12 | Download : 6

Publication Date : 0000-00-00

Article Type : Research Paper

Abstract :We investigated theoretically the change of electronic properties of Si d-doped GaAs layer as a function of temperature. We studied the influence of temperature on the donor concentration for a nonuniform distribution, which is taken as different from the known Gaussian distribution. In order to obtain the electronic structure we have calculated self-consistent Schrödinger - Poisson equations. We have seen that the change of the electronic properties as dependent on temperature is less pronounced at higher doping concentration.
Keywords : d doped GaAs, electronic structure, temperature dependence

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