Effect of rf power on the electrical properties of glow-discharge a-Si:H

Authors : Hüseyin TOLUNAY

Pages : 25-28

View : 18 | Download : 9

Publication Date : 0000-00-00

Article Type : Research Paper

Abstract :Hydrogenated amorphous silicon films were prepared in an rf glow-discharge system by decomposing undiluted silane at various rf power densities. Dark conductivity and photoconductivity of the films have been measured in the temperature range 420K-100K at four different photon fluxes. It was observed that both dark conductivity and photoconductivity increase with increasing rf power density.
Keywords : A Dark conductivity, B Photoconductivity, Rf power density, D Activation energy, E Hydrogenated amorphous silicon