The Effect of Phonon Drag of Charge Carriers in In1 - x Gax Sb

Authors : Sadiyar Ahmedoglu ZEYNALOV

Pages : 557-562

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Publication Date : 0000-00-00

Article Type : Research Paper

Abstract :The temperature dependencies of the thermal power a0 and thermal conductivity k in two samples of In1 - x GaxSb insert ignore into journalissuearticles values(x=0.65 and 0.45); doped by {Te\sim } 0.001 at%, with electron concentration n = 5.9 \cdot 1016 and 1.3 \cdot 1017 cm - 3 insert ignore into journalissuearticles values(at 100K);, have been investigated. It is shown that in In0.35Ga0.65Sb a0 increases with decreasing T below 50K. At 14K a0 passes through maximum and it falls sharply with decreasing T. It is shown that the maximum value of a0 is in agreement with the maximum value of k . In In0.55Ga0.45Sb, starting from T = 4.2K, a0 is shown to increase monotonically. For In0.35Ga0.65Sb, thermal power due to phonon drag aph is derived and its dependence on temperature, aphinsert ignore into journalissuearticles values(T);, is plotted. It is shown that when aph rises with decreasing T, aphinsert ignore into journalissuearticles values(T); changes as T-2.6; and when the curve falls, it is characterized by a power index of 2.8. These results for In0.35Ga0.65Sb compare reasonably well to other semiconductors for solid solutions and are in good agreement with Herring theory.
Keywords : Turk J Phys, 25, 2001, 557 562 Turk J Phys, vol 25, iss 6