The Temperature Dependence of Dark Conductivity in Hydrogenated Amorphous SiNx Films

Authors : Huseyin TOLUNAY, İlker AY

Pages : 223-228

View : 16 | Download : 8

Publication Date : 0000-00-00

Article Type : Research Paper

Abstract :Thin film samples of hydrogenated amorphous silicon nitride with varying nitrogen content were prepared by conventional plasma deposition from a mixture of SiH4 and NH3 . The dark conductivity insert ignore into journalissuearticles values(sd); of the films have been measured in the temperature range 420 K - 100 K. The conductivity is thermally activated with a single activation energy down to 250 K and conduction is dominated by electrons in extended states. A strong decrease is observed sigma d when the nitrogen content is increased.
Keywords : A Dark Conductivity, B Activation energy, C Pre exponential factor D Hydrogenated amorphous silicon nitride