Effect of Carrier Concentration Dependant Mobility on the Performance of High Electron Mobility Transistors

Authors : Mustafa EROL

Pages : 137-142

View : 14 | Download : 5

Publication Date : 0000-00-00

Article Type : Research Paper

Abstract :The influence of the sheet carrier concentration dependence on mobility on the performance of High Electron Mobility Transistor insert ignore into journalissuearticles values(HEMT); structures is theoretically modeled. The model basically takes into account both the drift and diffusion part of the overall drain current. The normalised drain current and normalised transconductance are found to be greatly affected by the carrier concentration dependant mobility.
Keywords : Turk J Phys, 25, 2001, 137 142 Turk J Phys, vol 25, iss 2