Barrier Heights of Antimony / and Bismuth / P -Silcon (100) Junctions

Authors : A A OBERAFO

Pages : 715-724

View : 15 | Download : 7

Publication Date : 0000-00-00

Article Type : Research Paper

Abstract :Junctions were fabricated in vacuum of about 10-5 Torr by thermal evaporation of Sb or Bi onto chemically etched p-type silicon insert ignore into journalissuearticles values(100); substrates. The electrical properties were studied by current voltage insert ignore into journalissuearticles values(I-V); measurements. Some of the Sb and Bi junctions were heated-treated for \frac{1}{2} hr at 200 and 150oC, respectively. The barrier height insert ignore into journalissuearticles values(BH); was equal to 0.64 eV for both as-deposited and heat-treated Sb junctions, while it was 0.56 and 0.74 eV for as-deposited and heat-treated Bi Junctions, respectively. These observatimons indicate that for Sb junctions, annealing at a temperature of 200oC resulted only in partial elimination of any interfacial layer insert ignore into journalissuearticles values(oxide);, while it modified the density of interface states. On the other hand, for Bi junctions, heat-treatment at 150oC eliminates completely the oxide layer, while also modifying the density of interface states.
Keywords : Turk J Phys, 24, 2000, 715 724 Turk J Phys, vol 24, iss 6