Internal Photoemission Spectroscopy for A PtSi/p-Si Schottky Junction

Authors : B Aslan And R TURAN

Pages : 577-586

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Publication Date : 0000-00-00

Article Type : Research Paper

Abstract :Properties of internal photoemission in a PtSi-Si Schottky junction have been studied. The traditional Fowler plot of a detector`s photoyield is found to be nonlinear for values close to the barrier height of the junction. It is shown that the model that takes all scattering mechanisms into account provides a successful description for the experimental results. It is also shown that the photoemission spectrum is independent of temperature in agreement with this model. The properties of detector`s ambient influence the photoemission spectrum for wavelength of 3 mm or less. A strong loss in the detector`s response is observed at around 3 mm. This drop is found to result from the ice formation on the detector`s surface during the cooling process and it can be avoided by using a more effective pumping system.
Keywords : Turk J Phys, 24, 2000, 577 586 Turk J Phys, vol 24, iss 4