Feasibility of Fabrication of Heteroepitaxial Gex Si1-x/Si(111) structure by Pulsed Nd: YAG Laser

Authors : R A ISMAIL, R N MOUSIS

Pages : 951-958

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Publication Date : 0000-00-00

Article Type : Research Paper

Abstract :Heteroepitaxial Gex Si1-x alloy layers have been formed by 10 ms and 300 m s laser pulse induced mixing of pure germanium films and Siinsert ignore into journalissuearticles values(111); substrates where Ge films of thickness insert ignore into journalissuearticles values(500-1250); Å are thermally evaporated onto Siinsert ignore into journalissuearticles values(111); under vacuum pressure \sim 10-5 Torr. The near surface of the sample then undergoes rapid melting and regrowth processes during each pulse from a free running Nd; YAG laser. The alloy layers are insert ignore into journalissuearticles values(4.6-6.5); mm thick and have a Ge fraction of x = 6-8.2%.
Keywords : Turk J Phys, 23, 1999, 951 958 Turk J Phys, vol 23, iss 6