Effect of Ionizing Radiation on the Silicon IMPATT Diode Characteristics

Authors : M B TAGAEV

Pages : 985-988

View : 15 | Download : 7

Publication Date : 0000-00-00

Article Type : Research Paper

Abstract :We investigated the effect of 60Co g-irradiation insert ignore into journalissuearticles values(doses from 102 to 2 \times 106 Gy);, both without and with heat annealing, on silicon IMPATT diode parameters. It is shown that such treatments improve the diode characteristics insert ignore into journalissuearticles values(particularly decrease the reverse current and increase both the output and the diffusion length of the minority charge carriers); due to radiation-enhanced processes.
Keywords : Turk J Phys, 23, 1999, 985 988 Turk J Phys, vol 23, iss 6