A GaInAsP/InP Vertical Cavity Surface Emitting Laser for 1.5 m m operation

Authors : R SCEATS, N BALKAN, M J ADAMS, J MASUM

Pages : 781-788

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Publication Date : 0000-00-00

Article Type : Research Paper

Abstract :We present the results of our studies concerning the pulsed operation of a bulk GaInAsP/InP vertical cavity surface emitting laser insert ignore into journalissuearticles values(VCSEL);. The device is tailored to emit at around 1.5 m m at room temperature. The structure has a 45 period n-doped GaInAsP/InP bottom distributed Bragg reflector insert ignore into journalissuearticles values(DBR);, and a 4 period Si/Al2O3 dielectric top reflector defining a 3-l cavity. Electroluminescence from a 16 m m diameter top window was measured in the pulsed injection mode. Spectral measurements were recorded in the temperature range between 125K and 240K. Polarisation, lasing threshold current and linewidth measurements were also carried out at the same temperatures. The threshold current density has a broad minimum at temperatures between 170K and 190K, insert ignore into journalissuearticles values(Jth=13.2 kA/cm2);, indicating a good match between the gain and the cavity resonance in this temperature range. Maximum emitted power from the VCSEL is 0.18 mW at 180K.
Keywords : Turk J Phys, 23, 1999, 781 788 Turk J Phys, vol 23, iss 4