Ionizing Radiations and Annealing Influence on MOSFET Charge States

Authors : Zainabidinov CİRAGİDDİN, Atamuratov ATABEK, Ysupov AKHMED

Pages : 485-492

View : 18 | Download : 5

Publication Date : 0000-00-00

Article Type : Research Paper

Abstract :The threshold voltage shift D VT and its components due to trapped-oxide charges D VNot and Si-SiO2 interface traps D VN in MOSFET exposed to Bremsstrahlung, Co60 irradiation and annealing were studied. Several effects caused by differences in the photon energies from two types of sources are discussed as well as a mechanism of changing the trapped-oxide and Si-SiO2 interface traps by annealing. The mechanism is based on previously available models.
Keywords : Turk J Phys, 23, 1999, 485 492 Turk J Phys, vol 23, iss 3