The Determination of Thermal Annealing Effect on the DOS Profile of a-Si:H Film

Authors : Tülay SERİN

Pages : 453-460

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Publication Date : 0000-00-00

Article Type : Research Paper

Abstract :In this study the aim was to investigate the effect of thermal annealing on the density of states insert ignore into journalissuearticles values(DOS); of hydrogenated amorphous silicon insert ignore into journalissuearticles values(a-Si:H); by means of a Schottky structure. In order to realize that goal the sandwich structured Au/a-Si:H/a-Si:Hinsert ignore into journalissuearticles values(n+-type);/Cr Schottky diode was fabricated. The junction capacitance of the samples were measured as a function of the amplitude of alternating voltage in the frequency range of 500 Hz - 100 KHz and in the annealing temperature range of 23 - 175oC. The density of states profile as a function of both annealing temperature and energy were plotted. The effect of the annealing on the density of states insert ignore into journalissuearticles values(DOS); is discussed.
Keywords : Turk J Phys, 22, 1998, 453 460 Turk J Phys, vol 22, iss 6