The Eect of Exposure Time to Clean Room Air on Characteristic Parameters of Au /Epilayer n-Si Schottky Diodes

Authors : M SAĞLAM, Ç NUHOĞLU, E AYYILDIZ, A TÜRÜT

Pages : 377-388

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Publication Date : 0000-00-00

Article Type : Research Paper

Abstract :A study has been made on determination and comparison of current-voltage insert ignore into journalissuearticles values(I-V); and capacitance-voltage insert ignore into journalissuearticles values(C-V); characteristics parameters of Au/n-Si Schottky barrier diodes insert ignore into journalissuearticles values(SBDs); with and without thin native oxide layer fabricated on n-type Si grown by LPE insert ignore into journalissuearticles values(Liquid-phase Epitaxy); technique. The native oxide layer with different thicknesses on chemically cleaned on Si surface were obtained by exposing the surfaces to clean room air before evaporating metal. The native oxide thicknesses of samples D2, D3, D4 and D5 are in the form D2 < D3 < D4 \leq D5, depending on the exposing time. It has been seen that the values of barrier height Fb of samples D2insert ignore into journalissuearticles values(0.64 eV);, D3insert ignore into journalissuearticles values(0.66 eV);, D4insert ignore into journalissuearticles values(0.69 eV); and D5insert ignore into journalissuearticles values(0.69 eV); with the interfacial layer increased with increasing the exposure time and tended to that of the initial sample D1 insert ignore into journalissuearticles values(nonoxidezed sample, 0.74 eV);, and thus also their I-V and C-V curves. The reverse current of sample D1 showed slight nonsaturating behavior. This ``soft`` behavior has been ascribed to the spatial inhomogeneity in the barrier heights at the MS interface. In particular, reverse bias curves of samples D2, D3, D4 and D5 have shown excellent saturation which may be attributed to the passivation of the semiconductor surface states by the native oxide layer which reduces the penetration of the wave functions of electron in the metal into the semiconductor. Especially, the I-V characteristics and experimental parameters of our devices are in agreement with recently reported results revealed by the pulsed surface photovoltage technique for the electronic properties of the HF-treated Si surface during initial oxidation in air.
Keywords : Turk J Phys, 22, 1998, 377 388 Turk J Phys, vol 22, iss 5