Effect of Neutron Irradiation on Carriers Removel Rates in n-Si

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Turkish Journal of Physics
Volume:22 Issue:2
Effect of Neutron Irradiation on Carriers Removel Rates in n-Si

Effect of Neutron Irradiation on Carriers Removel Rates in n-Si

Authors : MS YUNUSOV, M KARIMOV

Pages : 151-156

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Publication Date : 0000-00-00

Article Type : Research Paper

Abstract :Carrier removal rate in n-Si \langle P, Rh \rangle with different doping rhodium concentrations were investigated under fast neutrons irradiation. It is shown that the rate of carrier removal increases with phosphorus atom concentration but decreases with rhodium atom concentration. Theoretical analysis on the base of kinetic equations has shown that standard scheme of quasichemical reactions taking into account the interaction between rhodium atoms, vacancies and self interstitial atoms could not explain the results of experiment. Therefore a new model based on the use of radiation to increase the barrier between regions of fluctuating impurity concentration has been proposed.
Keywords : Turk J Phys, 22, 1998, 151 156 Turk J Phys, vol 22, iss 2

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