Extended defects in GaN nanocolumns characterized by cathodoluminescence directly performed in a transmission electron microscope

Authors : Frank BERTRAM, Marcus MÜLLER, Gordon SCHMIDT, Peter VEIT

Pages : 323-327

Doi:10.3906/fiz-1405-5

View : 19 | Download : 7

Publication Date : 0000-00-00

Article Type : Research Paper

Abstract :Using cathodoluminescence spectroscopy directly performed in a scanning transmission electron microscope at liquid helium temperature, the structural and optical properties of GaN nanocolumns, in particular extended defects like stacking faults and dislocations, have been characterized. The influence of the crystalline real structure on the emission properties using the capability of addressing individual stacking faults is comprehensively examined.
Keywords : Scanning transmission electron microscope, cathodoluminescence, extended defects, basal plane stacking fault, GaN nanocolumns