GaN nanostructuring for the fabrication of thin membranes and emerging applications

Authors : Ion TIGINYANU, Veaceslav URSAKI

Pages : 328-368

Doi:10.3906/fiz-1406-20

View : 15 | Download : 6

Publication Date : 0000-00-00

Article Type : Research Paper

Abstract :We present a review of technological methods developed in recent years for the purpose of gallium nitride nanostructuring, with the main focus on fabrication of thin GaN membranes. In particular, we report on traditional methods of wet etching undercutting for membrane manufacturing, technologies applied for the fabrication of photonic crystal structures based on GaN nanomembranes, double side processing, and surface charge lithography. Prospects of membrane applications in photonic devices, sensors, and microoptoelectromechanical and nanoelectromechanical systems are discussed, taking into account the advantageous piezoelectric, optical, and mechanical properties of GaN and related III-V nitride materials.
Keywords : GaN nanomembranes, wet etching, photoelectrochemical etching, dry etching, liftoff techniques, e beam lithography, surface charge lithography, photonic crystal membrane nanocavities, sensors