Processing of germanium for integrated circuits

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Turkish Journal of Physics
Volume:38 Issue:3
Processing of germanium for integrated circuits

Processing of germanium for integrated circuits

Authors : Ray DUFFY, Maryam SHAYESTEH, Ran YU

Pages : 463-477

Doi:10.3906/fiz-1405-2

View : 16 | Download : 13

Publication Date : 0000-00-00

Article Type : Research Paper

Abstract :In this review paper the authors will focus on Ge processing for integrated circuits. The key areas that require the most attention are substrates and integration, gate dielectrics, and access resistance. We will discuss each of these topics in turn, while also reviewing the most scaled Ge field-effect-transistor devices, and consider how modelling activities have matured for Ge in recent years.
Keywords : Semiconductors, Germanium, Processing, Substrates, Integration, Dielectrics, Resistance, Field effect transistors

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