Solution processable graphene oxide hole transport layers and their application in P3HT:HHPER active layer based BHJSCSolution processable graphene oxide hole transport layers and their application in P3HT:HHPER active layer based BHJSC

Authors : Görkem MEMİŞOĞLU, Halide DİKER, Canan VARLIKLI

Pages : 254-263

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Publication Date : 0000-00-00

Article Type : Research Paper

Abstract :Graphene oxide insert ignore into journalissuearticles values(GO); material was synthesized by an improved Hummers method and characterized by FT-IR, XPS, XRD, AFM, SEM, and UV-VIS analyses. The thickness of the GO layer was measured as 1.5 nm. Solution processed bulk heterojunction solar cells comprising polyinsert ignore into journalissuearticles values(3-hexylthiophene); insert ignore into journalissuearticles values(P3HT); as the electron donor and N,N`-bis-2-insert ignore into journalissuearticles values(1-hydoxyhexyl);-3,4,9,10-perylenebisinsert ignore into journalissuearticles values(dicarboximide); insert ignore into journalissuearticles values(HHPER); as the electron acceptor component of the active layer were produced with and without the GO doped PEDOT-PSS hole transport layers. The optical investigations of the active layer were performed by ground state absorption and photoluminescence measurements. Optimized blend w/w was determined as P3HT:HHPER, 3:1. It was found that the presence of GO in PEDOT:PSS by 0.05 w/w reduces the charge transfer resistance and enhances not only the $J_{sc}$, but also V$_{oc}$ values. However, it cannot inhibit V$_{oc}$ losses obtained through annealing the active layer at temperatures higher than 120 $^{\circ}$C.
Keywords : Bulk heterojunction solar cell, perylenediimide, graphene oxide, impedance spectroscopy