Achieving carrier and photon confinement in Ga(NAsP)/AlGaP/GaP QWs on Si substrates

Authors : Ömer Lütfi ÜNSAL, Beşire GÖNÜL

Pages : 337-343

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Publication Date : 0000-00-00

Article Type : Research Paper

Abstract :A detailed comparative theoretical analysis on both carrier and photon confinement of dilute nitride direct bandgap GaN$_{x}$As$_{1-x-y}$P$_{y}$ with that of GaAs$_{1-y}$P$_{y}$ on Si substrates is presented. Model calculations indicate that optical confinement factor of GaAs$_{1-y}$P$_{y}$/GaP is greater than that of GaN$_{x}$As$_{1-x-y}$P$_{y}$/GaP for all concentrations. We have demonstrated that one can improve the optical confinement factor of GaN$_{x}$As$_{1-x-y}$P$_{y}$/GaP by using an Al$_{z}$Ga$_{1-z}$P cladding layer.
Keywords : Dilute nitride phosphide alloys, N incorporation, effective mass, band anticrossing model, carrier and photon confinement