Effects of annealing temperature on electrical characteristics of sputtered Al/Al 2 O 3 /p-Si (MOS) capacitors

Authors : Şenol KAYA, Erhan BUDAK, Ercan YILMAZ

Pages : 470-477

View : 20 | Download : 7

Publication Date : 0000-00-00

Article Type : Research Paper

Abstract :  The aim of this study is to investigate annealing effects on the electrical characteristics of aluminum oxide insert ignore into journalissuearticles values(Al 2 O 3 ); MOS capacitors. Chemical changes after annealing have been characterized using the Fourier transform infrared spectroscopy prior to detailed electrical investigation. The influence of annealing temperature on electrical characteristics has been investigated by capacitance-voltage insert ignore into journalissuearticles values(C-V); and conductance-voltage insert ignore into journalissuearticles values(G/ω-V); curves. Effective oxide trap density insert ignore into journalissuearticles values(N ox );, border trap densities insert ignore into journalissuearticles values(N 2bt );, and interface trap densities insert ignore into journalissuearticles values(N it ); were calculated during the electrical analysis. Remarkable changes in the measurements were observed depending on the annealing temperatures. The obtained results demonstrate that the optimum annealing temperature is 450 °C for the Al2O3-based devices.
Keywords : Al Al 2 O 3 p Si MOS, capacitors, annealing effect, interface states, series resistance