On current-voltage and capacitance-voltage characteristics of metal-semiconductor contacts

Authors : Abdulmecit TÜRÜT

Pages : 302-347

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Publication Date : 0000-00-00

Article Type : Research Paper

Abstract :It is expected the fact that the current following across metal-semiconductor insert ignore into journalissuearticles values(MS); rectifying contact named as Schottky barrier diode insert ignore into journalissuearticles values(SBDs); and effect of sample temperature on their electrical properties obey thermionic emission insert ignore into journalissuearticles values(TE); current model. But, it has been seen that the abnormal behaviors in the measured electrical characteristics cannot be exactly understood by the classical TE transport theory. In the literature, the observed abnormal behaviors have been successfully explained by a Gaussian distribution function and by the pinch-off model being interaction of the neighbor patches suggested by Tung and coworkers, the named discrete regions model as “patches” with low barrier placed in a higher uniform barrier area.
Keywords : Metal semiconductor contact, Schottky contacts, Schottky barrier diodes, rectifying contact, Schottky barrier height, barrier inhomogeneity, characteristics diode parameters