Influence of annealing on photoelectric characteristics and stability of elementsbased on Si-Bi2Te3−xSex

Authors : Gurban AHMADOV

Pages : 348-355

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Publication Date : 0000-00-00

Article Type : Research Paper

Abstract :In the manufacture of Bi2Te3−xSex-based elements using two sources of the deposited substance, they wereinitially annealed at a temperature of 150–200 °Ñ in a low vacuum. Heat treatment led to a slight increase in shortcircuit current and an increase in open circuit voltage. When the elements were heated in high vacuum, as well as inatmospheres of argon, nitrogen, hydrogen, helium and other gases, irreversible changes in the characteristics were notdetected. Heat treatment of elements at a temperature of 100–150 °C in oxygen always improves their performance. Itis assumed that annealing stimulates the growth of the transition layer at the interface. Annealing of solar cells basedon Si-Bi2Te3−xSexat an even higher temperature leads to a further irreversible deterioration of their characteristics.
Keywords : Heterojunction, semiconductor materials, solar cells, converters, annealing