Tuning the magnetic field sensitivity of planar Hall effect sensors by using a Crspacer layer in a NiFe/Cr/IrMn trilayer structure

Authors : Hasan PİŞKİN, Numan AKDOĞAN
Pages : 554-563
View : 22 | Download : 7
Publication Date : 0000-00-00
Article Type : Research Paper
Abstract :Planar Hall effect insert ignore into journalissuearticles values(PHE);-based magnetic field sensors have recently received considerable attention due totheir fascinating properties. For the NiFe/spacer/IrMn trilayer PHE sensor structures, tuning the exchange bias via aspacer layer is very crucial due to its direct effects on the sensor’s magnetic field sensitivity. Here the effect of Cr spacerlayer thickness on PHE sensitivity and exchange bias is investigated in NiFe insert ignore into journalissuearticles values(10 nm);/Cr insert ignore into journalissuearticles values(tCr);/IrMn insert ignore into journalissuearticles values(20 nm); trilayerstructures where the tCrvaried between 0.0 nm and 1 nm with a step of 0.1 nm. As the tCrincreased, we observed afast decrease in exchange bias field. When the thickness of Cr spacer layer increased up to 0.7 nm, a maximum sensitivityof 4.4V/insert ignore into journalissuearticles values(OemA); was obtained. Besides, sensor voltage exhibited ±100 nV noise level. With this noise level, a 1.6T magnetic field resolution was achieved.
Keywords : Planar Hall effect, magnetoresistive sensors, exchange bias

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