Ag / a-Si:H (n-type) / Cr SCHOTTKY DIODES PREPARED BY AN RF MAGNETRON SPUTTER TECHNIÇUE

Home Page
About
Submit A Journal
Submit A Conference
Submit Paper/Book
- Submit a Preprint
- Submit a Book
Contact

Communications Faculty of Sciences University Ankara Series A2-A3 Physical and Engineering
Volume:36
Ag / a-Si:H (n-type) / Cr SCHOTTKY DIODES PREPARED BY AN RF MAGNETRON SPUTTER TECHNIÇUE

Ag / a-Si:H (n-type) / Cr SCHOTTKY DIODES PREPARED BY AN RF MAGNETRON SPUTTER TECHNIÇUE

Authors : Tülay SERİN

Pages : 0-0

Doi:10.1501/commua1-2_0000000062

View : 32 | Download : 7

Publication Date : 1987-01-01

Article Type : Research Paper

Abstract :In this study we examined the Schottky diode characteristies of Ag / a-Si:H/ a»Si:H insert ignore into journalissuearticles values(n- type); / Cr devices. Thin films of amorphous Silicon prepared by an RF magnetron sputter techni- que on chromium contacted glass substrates and transparent silver electrodes insert ignore into journalissuearticles values(area 7.85xl0“3 cm2); were applied under a vacuum of 10-5 Ton. The cunent-voltage-temperature characteristies were measured in the dark and under illumination. The barrier height of silver rectifier contact was determined using Bethe’s isothermal termionic emission theory and Fowler photoelectrical theory 0 B n = 1.36 eV, 1.47 eV respeetively.
Keywords : TECHNIÇUE, DIODES, SCHOTTKY

ORIGINAL ARTICLE URL

* There may have been changes in the journal, article,conference, book, preprint etc. informations. Therefore, it would be appropriate to follow the information on the official page of the source. The information here is shared for informational purposes. IAD is not responsible for incorrect or missing information.