The determination of minority carrier diffusion coefficient from the C-V characteristics of the Au/Ge/Sn structure

Authors : Tülay SERİN

Pages : 0-0

Doi:10.1501/commua1-2_0000000072

View : 8 | Download : 14

Publication Date : 1988-01-01

Article Type : Research Paper

Abstract :We here aimed to determined the minority carrier diffusion coefficient of germanium from the capacitance -voltage characteristics of the. Au/Ge /Sn Schottky diode. For the device fab- rication and 10 Ohm-cm resistivity was used. The evaporation of gold and tin metals were per- formed under a vacuum of 10 ’5 Torr. Capacitance-voltage-frequency characteristics were mea- sured at room temperature and liquid nitrogen temperature. We experimentally determined minority carrier diffusion coefficient as 47-57 cm2 /s by meam of the diffusion capacitance con- cept of p /n junction which had been adapted into a Schottky barrier.
Keywords : C V characteristics, Au Ge Sn, coefficient