Operation of bipolar and field effect transistors in radiation environments

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Communications Faculty of Sciences University Ankara Series A2-A3 Physical and Engineering
Volume:43
Operation of bipolar and field effect transistors in radiation environments

Operation of bipolar and field effect transistors in radiation environments

Authors : Fouad As SOLİMAN

Pages : 9-23

Doi:10.1501/commua1-2_0000000049

View : 11 | Download : 10

Publication Date : 1994-01-01

Article Type : Research Paper

Abstract :An investigation of radiation damage in bipolar and field effect transistors is presented. For low frequency transistors, 90 % of the damage in forward current gain occurs at k>w y doses around 100 K. rads. On the other hand, tlıe effects on microwave transistors occur at lıigher- dosc levels up to 100 x 106 rads. The damage effect has minimum that usually corresponds to the low insert ignore into journalissuearticles values(0.10 mA.); and higher insert ignore into journalissuearticles values(300 mA); ends of the operating collector current range of a device.
Keywords : Operation, Bipolar, Radiation environments

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