The Effect of Align Parameter on Scattering Parameter for Pseudomorphic High Electron Mobility Transistor

Authors : Gökhan SATILMIŞ

Pages : 89-96

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Publication Date : 2020-12-31

Article Type : Research Paper

Abstract :In this paper, various physical device simulation of pseudomorphic High Electron Mobility Transistos are realized to show the effect of align parameter on scattering parameters. S parameters are complex numbers,so both real and imaginer part of scattering parameters are plotted with respect to frequency at different align parameters. In all figures, a brief explanation about the change of S parameter with respect to frequency and align parameter are provided. The effect of align parameter, which has a value of 0.4 differ from other align parameter values such as 0.45, 0.5, 0.55 and 0.6 on scattering parameters of the tranistor structure.
Keywords : PHEMT, Scattering Parameters, Align Parameter, Device Simulation