Detailed Structural and Morphological Characterization of InGaN Thin Films Grown by RF Magnetron Sputtering with Various Substrate Temperature

Authors : Asim MANTARCI

Pages : 151-160

Doi:10.18466/cbayarfbe.486961

View : 17 | Download : 16

Publication Date : 2019-06-30

Article Type : Research Paper

Abstract :Indium Gallium Nitride  thin film was successfully grown on the  substrate using an RF magnetron sputter under condition of different substrate temperatures. Various experimental measurements were taken to understand effect of substrate temperature on the structure of thin film and results were analyzed. Grazing mode of XRD results confirmed that  thin film has a hexagonal structure with  plane for  and substrate temperature. It was seen that structural parameters of thin film show a change with substrate temperature change. Reasons were discussed. Strain and stress values in  thin film were calculated from experimental results and it was found that all thin film has compressive stress. Morphological parameters of thin film were measured by AFM and it was understood that these properties are varied by changing substrate temperature. Also, growth mode of some thin film was found to be layer-plus-island mode (Stranski-Krastanov growth mode), others was found to be layer by layer growth mode (Frank van der Merwe mode). SEM analysis gives that increasing substrate temperature worsened the surface structure of  thin film; it is compatible with and supports XRD results. Compositional values in  thin film were found from XPS analysis. In addition to our material, carbon and oxygen have also been obtained from XPS results, as expected. Detailed structural and morphological properties of thin film have been seen to change by changing substrate temperature and we believe this may play an important role in the production of  based optoelectronic devices.
Keywords : InGaN, thin film technology, RF magnetron sputtering, substrate temperature