SAFSIZLIK DÜZEYLERİ ARASINDAKİ KIZILÖTESİ GEÇİŞLER ÜZERİNE ELEKTRİK ALAN ETKİSİ

Home Page
About
Submit A Journal
Submit A Conference
Submit Paper/Book
- Submit a Preprint
- Submit a Book
Contact

Cumhuriyet Üniversitesi Fen-Edebiyat Fakültesi Fen Bilimleri Dergisi
Volume:36 Issue:7
SAFSIZLIK DÜZEYLERİ ARASINDAKİ KIZILÖTESİ GEÇİŞLER ÜZERİNE ELEKTRİK ALAN ETKİSİ

SAFSIZLIK DÜZEYLERİ ARASINDAKİ KIZILÖTESİ GEÇİŞLER ÜZERİNE ELEKTRİK ALAN ETKİSİ

Authors : Fatih Ungan, Emre Bahadır Al, Yunus Emre Yıldız

Pages : 153-173

Doi:10.17776/csj.04150

View : 49 | Download : 15

Publication Date : 2015-12-31

Article Type : Other Papers

Abstract :Abstract .In this study, the effects of electric fields, the concentrations of nitrogen and indium on infrared transitions between 1s, 2s ve 2p± donor impurity energy levels at the single GaInNAs/GaAs quantum well are investigated using the variational method in the framework of the effective mass approximation. Key Words: Single quantum well, band anti-crossing (BAC) model, Impurity binding energy, Dilute III-N-V semiconductors
Keywords :

ORIGINAL ARTICLE URL

* There may have been changes in the journal, article,conference, book, preprint etc. informations. Therefore, it would be appropriate to follow the information on the official page of the source. The information here is shared for informational purposes. IAD is not responsible for incorrect or missing information.