SAFSIZLIK DÜZEYLERİ ARASINDAKİ KIZILÖTESİ GEÇİŞLER ÜZERİNE ELEKTRİK ALAN ETKİSİ

Abstract .In this study, the effects of electric fields, the concentrations of nitrogen and indium on infrared transitions between 1s, 2s ve 2p± donor impurity energy levels at the single GaInNAs/GaAs quantum well are investigated using the variational method in the framework of the effective mass approximation. Key Words: Single quantum well, band anti-crossing (BAC) model, Impurity binding energy, Dilute III-N-V semiconductors