Designing and simulation SOI MOSFET transistorsto enhance DIBL parameterand improveself-thermal effects

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Cumhuriyet Üniversitesi Fen-Edebiyat Fakültesi Fen Bilimleri Dergisi
Volume:36 Issue:3
Designing and simulation SOI MOSFET transistorsto enhance DIBL parameterand improveself-thermal effe...

Designing and simulation SOI MOSFET transistorsto enhance DIBL parameterand improveself-thermal effects

Authors : Samad GHALANDARİ, Hossein BAHRAMİ, Hasti ABBASİ, Gholamreza KARİMİ

Pages : 2090-2096

View : 45 | Download : 13

Publication Date : 2015-05-13

Article Type : Review Paper

Abstract :Abstract. In this study, a new structure for FD SOI MOSFET has been presented toimprove DIBL parameter and also to enhance self-heating effect. The main idea of this structure is to change the thickness of BOX layer in transistor in order to improve DIBL parameter and self-heating effect.
Keywords : Self Heating Effect, FD SOI MOSFET, DIBL

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